2026-09-16 · Fuente：TechPowerUp
Anonymous sources tell Reuters the chipmakers are weighing a joint venture or an Ohio lease that would put DRAM lines on US soil.
Intel and SK hynix are holding talks that could establish DRAM production lines inside the United States for the first time, according to unnamed sources close to the matter cited by Reuters. Two structures are on the table: a joint venture through which Intel would gain access to memory IP technology from its South Korean counterpart, or an alternative arrangement in which SK hynix leases a portion of Intel's facility in Ohio.
Under the joint-venture scenario, the partnership would meaningfully ease supply chain strains, since hyperscalers, fabless chip designers, and other customers are urgently seeking additional DRAM supply. With those buyers positioned to absorb essentially all output over the coming years, both companies would hold a substantial financial stake in making the venture work. The leasing alternative carries a different profile: SK hynix would pay premiums to use Intel's Ohio site while retaining all of the output for itself.
Reuters was unable to determine which specific technology the facility would target. The primary objective, per the report, is to manufacture conventional planar DRAM, HBM, and some storage products based on NAND Flash.
Neither company is confirming the discussions. Intel declined to comment on the rumor but noted that its investments in Ohio are continuing regardless of how the talks conclude. SK hynix said it has not finalized its decision or any cooperation, though it did not explicitly rule out the possibility of future collaboration. Per the sources, an official decision should be announced soon — and whichever structure prevails, the outcome would mark a notable shift in where DRAM is made.
Etiquetas: Intel · SK hynix · DRAM · HBM · NAND Flash · Data Center
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